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| Bulletin I2404 rev. A 07/00 16RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM 16A Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 10 to 120 16 85 35 16RIA 140 to 160 16 85 35 225 235 255 235 1400 to 1600 110 Units A C A A A A 2s A 2s V s C @ 50Hz @ 60Hz 340 360 574 524 100 to 1200 It @ 50Hz @ 60Hz VDRM/VRRM tq TJ typical - 65 to 125 Case Style TO-208AA (TO-48) www.irf.com 1 16RIA Series Bulletin I2404 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 10 20 40 60 16RIA 80 100 120 140 160 V DRM /V RRM , max. repetitive peak and off-state voltage (1) V 100 200 400 600 800 1000 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage (2) V 150 300 500 700 900 1100 1300 1500 1700 I DRM /I RRM max. @ TJ = TJ max. mA 20 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms On-state Conduction Parameter IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current 16RIA 10 to 120 16 85 35 340 360 285 300 140 to 160 16 85 35 225 235 190 200 255 235 180 165 2550 1.14 1.31 14.83 12.03 --1.80 Units A C A A Conditions 180 sinusoidal conduction t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I2t Maximum I2t for fusing 574 524 405 375 A2s t = 10ms t = 8.3ms t = 10ms t = 8.3ms I2t Maximum I2t for fusing voltage 5740 0.97 1.24 17.9 13.6 1.75 --- A2s V t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage m (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. V Ipk= 50 A, TJ = 25C TJ = 25C. Anode supply 6V, resistive load, IH IL Maximum holding current Latching current 130 200 mA 2 www.irf.com 16RIA Series Bulletin I2404 rev. A 07/00 Switching Parameter di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 800V VDRM 1000V VDRM 1600V tgt trr tq Typical turn-on time Typical reverse recovery time 200 180 160 150 0.9 4 s TJ = 25C, at = rated VDRM/VRRM, TJ = 125C TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. A/s 16RIA Units Conditions TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 16RIA 100 300 (*) Units V/s Conditions TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 16RIA160S90. Triggering Parameter PGM IGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger 90 60 35 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.0 2.0 1.0 2.0 0.2 V V mA V mA TJ = - 65C TJ = 25C TJ = 125C TJ = - 65C TJ = 25C TJ = 125C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied 16RIA 8.0 2.0 1.5 10 Units Conditions W A V TJ = TJ max. TJ = TJ max. TJ = TJ max. www.irf.com 3 16RIA Series Bulletin I2404 rev. A 07/00 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 16RIA - 65 to 125 - 65 to 125 0.86 Units Conditions C C K/W DC operation R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque to nut 0.35 K/W Mounting surface, smooth, flat and greased to device 25 0.29 2.8 lbf-in kgf.m Nm g (oz) See Outline Table Lubricated threads (Non-lubricated threads) 20(27.5) 0.23(0.32) 2.3(3.1) wt Approximate weight Case style 14 (0.49) TO-208AA (TO-48) RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.21 0.25 0.31 0.45 0.76 0.15 0.25 0.34 0.47 0.76 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 16 1 RIA 160 2 3 M 4 S90 5 1 2 3 4 - Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 X 1 5 - Critical dv/dt: None = 300V/s (Standard value) S90 = 1000V/s (Special selection) 4 www.irf.com 16RIA Series Bulletin I2404 rev. A 07/00 Outline Table Case Style TO-208AA (TO-48) All dimensions in millimeters (inches) Maximum Allowable Case Temperature (C) 120 110 100 90 80 70 60 50 0 5 16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W Maximum Allowable Case Temperature (C) 130 130 120 110 100 16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W Conduction Angle Conduction Period 90 80 70 60 50 0 30 30 60 60 90 120 180 DC 10 20 30 40 90 120 180 10 15 20 25 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 5 16RIA Series Bulletin I2404 rev. A 07/00 Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 5 10 Conduction Angle 180 120 90 60 30 RMS Limit hS Rt 2 A K/ W = 1 0. W K/ 3K /W 4K /W 5K /W 7K /W 10 K/W a elt -D R 16RIA Series (100 to 1200V) TJ = 125C 15 20 25 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 4 8 12 RMS Limit Conduction Period DC 180 120 90 60 30 hS Rt 2 A K/ W = 1 0. W K/ 3K /W 4K /W 5K /W 7K /W 10 K/W a elt -D R 16RIA Series (100 to 1200V) TJ = 125C 16 20 24 28 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics 300 Peak Half Sine W ave On-state Current (A) 280 260 240 220 200 180 160 140 1 16RIA Series (100 to 1200V) 10 100 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial TJ= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 Peak Half Sine Wave On-state Current (A) 325 300 275 250 225 200 175 150 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated V RRM Reapplied 16RIA Series (100 to 1200V) 0.1 Pulse Train Duration (s) 1 125 0.01 Num Of Equal Amplitude Half Cycle Current Pulses (N) ber Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 6 www.irf.com 16RIA Series Bulletin I2404 rev. A 07/00 1000 Instantaneous On-state Current (A) 16RIA Series (100 to 1200V) 100 10 TJ = 25C TJ = 125C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Maximum Allowable Case Temperature (C) 16RIA Series (1400 to 1600V) R thJC (DC) = 1.15 K/W Maximum Allowable Case Temperature (C) 130 130 120 110 100 90 80 30 70 0 5 90 60 120 Conduction Period 16RIA Series (1400 to 1600V) R thJC (DC) = 1.15 K/W 120 110 Conduction Angle 100 30 60 90 120 90 180 180 DC 20 25 30 80 0 2 4 6 8 10 12 14 16 18 10 15 Average On-state Current (A) Average On-state Current (A) Fig. 8 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 30 25 20 15 10 5 0 180 120 90 60 30 RMS Limit Fig. 9 - Current Ratings Characteristics S R th /W 1K W K/ 1.5 /W 2K W K/ 5 2. 3. 5 A K/ W /W .5 K =0 5K /W R elta -D 7K /W Conduction Angle 10 K/W 16RIA Series (1400 to 1600V) T = 125C J 0 5 10 15 20 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 10 - On-state Power Loss Characteristics www.irf.com 7 16RIA Series Bulletin I2404 rev. A 07/00 Maximum Average On-state Power Loss (W) 40 35 30 25 DC 180 120 90 60 30 SA R th /W 1K W K/ 2 K/ W 2. 5K /W 3.5 K/W 5 1. K/W .5 =0 aR elt -D 20 RMS Limit 15 10 5 0 0 4 8 12 Conduction Period 5K /W 7K /W 16RIA Series (1400 to 1600V) TJ = 125C 16 20 24 10 K /W 28 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 11 - On-state Power Loss Characteristics 200 Peak Half Sine Wave On-state Current (A) 180 160 140 120 100 80 250 Peak Half Sine Wave On-state Current (A) 225 200 175 150 125 100 16RIA Series (1400 to 1600V) 0.1 Pulse Train Duration (s) 1 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V Reapplied RRM 16RIA Series (1400 to 1600V) 1 10 100 75 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 12 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) Fig. 13 - Maximum Non-Repetitive Surge Current 100 T = 25C J 10 T = 125C J 16RIA Series (1400 to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics 8 www.irf.com 16RIA Series Bulletin I2404 rev. A 07/00 Transient Thermal Impedance Z thJC (K/W) 10 Steady State Value RthJC = 1.15 K/W (DC Operation) 1 0.1 16RIA Series 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 15 - Thermal Impedance Z thJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (b) Tj = -65 C Tj = 25 C (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 1ms Tj = 125 C 1 VGD IGD 0.01 (1) (2) (3) (4) 0.1 0.001 16RIA Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 16 - Gate Characteristics WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. www.irf.com 9 |
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